Transistoren

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE • Low drain−source ON resistance : RDS (ON) = 1.7 Ω (typ.) • High forward transfer admittance : |Yfs| = 3.0 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) •...

1,82 € *